FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) @ Vgs: 26nC @ 5V
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 90A
Power - Max: 94W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3
Input Capacitance (Ciss) @ Vds: 3200pF @ 15V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V
Features: • Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 operating temperature
• Pb-free lead plating; RoHS compliantSpecifications
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
I D |
T C=25 2) |
90 |
A |
| T C=100 |
77 |
| Pulsed drain current |
I D,pulse |
T C=25 3) |
360 |
| Avalanche energy, single pulse |
E AS |
I D=90 A, R GS=25 |
150 |
mJ |
| Reverse diode dv /dt |
dv /dt |
I D=90 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 |
6 |
kV/s |
| Gate source voltage4) |
V GS |
|
±20 |
V |
| Power dissipation |
P tot |
T C=25 |
94 |
W |
| Operating and storage temperature |
T j, T stg |
|
-55 ... 175 |
|
| IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
|
2) Current is limited by bondwire; with an RthJC=1.6 K/W the chip is able to carry 109 A.
3) See figure 3
4) T j,max=150 and duty cycle D<0.25 for V GS<-5 VParameters: | Technical/Catalog Information | IPDH4N03LAG |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 90A |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 3200pF @ 15V |
| Power - Max | 94W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 26nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPDH4N03LAG
IPDH4N03LAG
IPDH4N03LAGINTR ND
IPDH4N03LAGINTRND
IPDH4N03LAGINTR
|
IPDH4N03LAG Data Sheet
